THE STUDY OF THE BRILLOUIN ZONES BY MEANS OF THE KIKUCHI PATTERNS. R.K.Karakhanyan, P.L.Aleksanyan, S.E.Bezirganyan, Dep. of Solid State Physics, Faculty of Physics, Yerevan State University, No.1, A. Manoogian St., 375049 Yerevan-49, Armenia. Fax: +374-2-151087, gayane@arminco.com

In the present work on the basis of the correspondence of the Brillouin zones' boundaries to the Kikuchi lines [1,2] Brillouin zones of electronic states in crystal of silicon are investigated. It is shown, that the energy gap on the Brillouin zones' boundaries with the forbidden indices for structure of silicon is connected with the valent double diffraction on the crystalline planes, and these boundaries correspond to the forbidden Kikuchi lines [3]. It is found, that three-beams dynamical interactions transform the crossing of the boundaries of the bidimensional Brillouin zones into two branches of hiperbola, as well as the Kikuchi lines [4]. The obtained results are in acordance with the known data of theory of solids, concerning Brillouin zones [5]. The single crystalline silicon films were prepared by chemical etching, and the Kikuchi patterns were obtained at the accelerating voltage of 100 kV.

References

1. R.K.Karakhanyan, P.L.Aleksanyan, P.A.Grigoryan. Kristallografiya, 29, 785 (1984).

2. M.Gaidardziska-Josefovska, J.M.Cowley. Acta Cryst. A47, 74 (1991).

3. R.K.Karakhanyan, P.L.Aleksanyan, J.K.Manucharova. Phys. Stat. Sol. (a), 121, K1 (1990).

4. J.M.Cowley. Diffraction Physics, New York, 1975.

5. C.Kittel. Quantum Theory of Solids, New York - London, 1963.