INVESTIGATION OF STORED ENERGY IN TiN-FILMS BY THIN FILM DIFFRACTION H. Wulff, C. Eggs* E.-M.-A.-University, Institute of Physical Chemistry, 17489 Greifswald, Germany* E.-M.-A.-University, Department of Physics, 17489 Greifswald, Germany.

Thin TiN films were deposited using a Hollow Cathode Arc Evaporation Device (HCAED) for studying the influence of low energy ion bombardment on film growth and film properties. Films were deposited at various nitrogen gas flows and negative substrate voltages at a defined discharge power, and investigated by thin film x-ray diffraction and x-ray photoelectron spectroscopy.

From the broadening and shifting of x-ray lineprofiles the dislocation densities and the concentration of interstitials in the films were calculated. With the energies of individual dislocations and interstitials a calculation was made of the energy stored in the films caused by low energy ion bombardment. The results were compared with investigations of the energy transfer to the substrate during titanium respective titaniumnitride deposition in HCAED [1].

[1] H.Steffen, H. Kersten, H.Wulff, J.Vac.Sci.Technol. A 12 (1994) 2780