ANTIMONY - DOPED TIN OXIDE THIN FILMS (SnO_x) MADE BY EVAPORATION METHOD. Vo Vong, Laboratory of Electron Microscopy, Vietnam National Center for Natural Science & Technology, Nghiado - Tuliem-Hanoi - Vietnam

Tin and Antimony, which have mass-rate 10:1; pure 99,99%, were evaporated simultaneously at the two differential sources in high vacuum of 10^-5 Torr. The substraste temperature is changed as following 100deg.C,120deg.C,150deg. C and 200deg.C .

Thin films Sn(In)O_x were annealed in air and in oxygen for 120 min. at the temperatures 150, 180, 210, 230, 250, 300, 350, 400 and 450deg.C . Changes of the films in process of the heat treatment were studied by transmission electron microscopy, scanning electron microscopy, electron and X-ray diffraction and measurements of transmittances as the function of wavelength.

High-quality Sn(In)O_x thin films are found to be strongly dependent on parameters such as the antimony content, a deposition temperature, a temperature of the annealing

Under optimum conditions we received thin films with a electrical resistivity of 15 [[Omega]]/u. Thickness of the films above 0,3 - 0,5 um, [[lambda]] = 0,4 - 0,7 um transmittance is reachable 92% .

Based on our experimental results the changes of mechanical, chemical and physical properties of films can be explained by the changes of the x-value.