Event Name

18th International Conference on Crystal Growth and Epitaxy ICCGE-18

Start Date 7th Aug 2016
End Date 12th Aug 2016
Description

 General Session (Fundamentals & Growth Technologies)

G01 Fundamentals of Nucleation and Crystal Growth
G02 Surfaces and Interfaces
G03 Nanomaterials and Low Dimensional Structures
G04 Thin Films and Epitaxial Growth
G05 Organic and Biological Crystallization
G06 Bulk Crystal Growth
G07 Crystalline Defects
G08 Advanced Growth Technologies
G09 In situ Observation and Characterization
G10 External Fields, Microgravity
G11 Industrial Crystallization

 Topical Session (Materials & Applications)

T01 III-V Semiconductors
T02 Group IV Semiconductors
T03 2D Materials
T04 II-VI and Oxide Materials
T05 Materials for Spintronics
T06 Materials for Optical Devices
T07 Materials for Electron Devices
T08 Materials for Organic Devices and Bio Applications
T09 Nitride Semiconductors
T10 Silicon Carbide
T11 Late News Session

 Joint Session - examples -

Growth Simulation and Practice
Nanostructure - Fundamentals and Applications
Location Nagoya
Japan
Contact Yusuke MORI
secretariat@iccge18.jp
URL http://www.iccge18.jp/
iCal


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Category IUCr sponsored meetings | Conferences
Topics Characterisation of materials | Crystal growth | General | Industrial crystallography | Materials | Surface studies