Microstructural analysis of integrated pin-shaped two-dimensional and three-dimensional ferroelectric capacitors from micro-focused synchrotron X-ray techniques
Future developments of Ferroelectric Random Access Memories (FeRAM) require integration of 3-dimensional (3D) ferroelectric capacitors in the memory architecture. Considering the critical role of the storage capacitor on the memory reliability, it is of particular interest to analyze the microstructural characteristics of the ferroelectric capacitors after the fabrication steps. The present novel approach consisting in the association of micro-focused synchrotron X-ray fluorescence (μXRF) and diffraction (μXRD) has been demonstrated as an efficient non-destructive diagnostic tool enabling relevant analysis of pin-shaped 3-dimensional ferroelectric capacitors.
N. Menou, Ch. Muller, L. Goux, R. Barrett, J.G. Lisoni, M. Schwitters and D.J. Wouters
![[Schematic]](https://www.iucr.org/__data/assets/image/0012/5205/Image10.gif)
Schematic of the experimental setup for μXRF and μXRD. The top right of the figure presents a TEM cross section of 3D capacitors showing the ferroelectric SBT film deposited on an etched bottom electrode stack Pt/IrO2/Ir/TiAlN on top of a W-plug.
