LOCKING CONFIGURATION OF DISLOCATIONS IN AIIIBV SINGLE CRYSTALS. Marian R. Surowiec, University of Silesia, Institute of Physics and Chemistry of Metals, 40007 Katowice, Bankowa 12, Poland
X-ray topography investigations of dislocations generated by compression of
InSb and by microindentation of InSb and GaAs single crystals revealed that
dislocations glide parallel to the (
)
surface and react in the (
)
plane. The present paper proposes possible explanation of reaction between
dislocations belonging to two neighbouring wings (fig.1). For the node I
reaction resulting in junction formation leeds to Lomer-Cottrell
Fig.1.
Formation of the new type of locking configuration as a result of reaction
between two dissociated dislocation loops. Arrows denote directions of
dislocations with indicated Burgers vectors.
lock formation:
Ingoing dislocations at node II give:
i.e. the same result as outgoing dislocations:
The new type of locking configuration consists of a stacking foult ribbon in [
]
direction and a Lomer-Cottrell lock between node I and node II.