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4 citations found for Gauthier, J.-P.
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The structure of a natural CT opal from Ethiopia is explored with a new method, using Fourier transformation, applied to scanning electron microscope images.

Reflexion electron diffraction (RHEED) patterns have been made on a SiC crystal fracture, showing a 102R polytypic modification on a 6H matrix. Its Zhdanov sequence can be written as |(34)433]3. The transition between 6H and 102R polytypes appears rather complex and can be explained with some typical diagrams.

Optical simulation methods are applied to the determination of the Ramsdell sequence of silicon carbide polytypes. A new technique to produce two-dimensional models allows the simulation of intermediate and long-period polytypes. Punched computer cards are stuck together and the model so formed is photographically reduced. Simulations of 6H, 15R and 27H SiC polytypes are shown for demonstration. The `zigzag' sequence for a 51-layer polytype is identified by comparison between its RHEED pattern and the laser diagrams of 51Ra and 51Rb optical models.