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SiC has a binary tetrahedral structure in which the Si and C layers are stacked
alternately, each carbon layer occupying half the tetrahedral voids between
successive close-packed silicon layers. One can regard the structure as
consisting of two identical interpenetrating close-packings, one of Si and the
other of C, with the one displaced relative to the other along the c -axis
through one fourth of the layer spacing. The binding between Si and C atoms in
SiC is predominantly covalent. The silicon-carbon bond length of 1.94 Å as
calculated from the known covalent tetrahedral radii of C and Si is nearly equal
to the observed silicon-carbon bond length of 1.89 Å. The tetrahedral
arrangement of Si and C in SiC does not permit either a centre of symmetry
(
) or a plane of symmetry (m ) perpendicular to [00.1].
Silicon carbide can therefore have only four possible space groups --
P 3m 1, R 3m 1, P 63mc and
F
3m.
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Commercial SiC crystals are grown at temperatures above 2000
C and are
called
-SiC crystals. The more common modifications in the
-SiC
crystals are 6H , 15R and 4H . They have stacking sequences
/ABCACB/ (=6H ), /ABCBACABACBCACB/(=15R ) and /ABCB/...(4H ).
Figure 11 depicts the structure of the most common
-SiC modification
6H with a packing ABCACB. In addition to the common modications (often
called the `basic structures` of
-SiC) several polytype structures with
stacking sequences of larger repeat periods have been discovered. These have
either a hexagonal or a rhombohedral lattice2. Table 3 lists the known
structures of SiC. In all these structures the h/a ratio is 0.817, which
is very close to the value of 0.8165 for an ideal close-packing. The cubic or
-SiC, with a packing /ABC/ABC/..., is denoted as 3C and normally
forms2 at temperatures below 1800
C. It is regarded as the low-
temperature modification of SiC and undergoes a solid-state transformation to
the 6H structure at temperatures above 1800
C2,16,17. The
wurtzite (2H ) modification of SiC, with a stacking sequence /AB/AB/...,
does not occur in commercial SiC and has been synthesized by special methods
between the temperatures of 1400 and 1500
C18. It is regarded as
a metastable modification of SiC and undergoes solid-state transformation to the
3C and 6H structures at temperatures above 1400
C17.
The h/a ratio in this structure is 0.8205 which differs considerably from
the ideal h/a ratio for perfect close-packing.
| Polytype | Structure (Zhdanov sequence) | Polytype | Structure (Zhdanov sequence) |
| 2H | 11 | 54H | (33)6323334 |
| 3C | 57H | (23)93333 | |
| 4H | 22 | 57R | (33)234 |
| 6H | 33 | 69R 1 | (33)332 |
| 8H | 44 | 69R 2 | 33322334 |
| 10H | 3322 | 75R 1 | (33)334 |
| 14H | (22)233 | 75R 2 | (32)3(23)2 |
| 15R | 23 | 81H | (33)535(33)634 |
| 16H 1 | (33)222 | 84R | (33)3(32)2 |
| 16H 2 | 332332 | 87R | (33)432 |
| 18H | (22)333 | 90R | (23)43322 |
| 19H | (23)322 | 96R | (33)33434 |
| 20H | (22)344 | 99R | (33)43222 |
| 21H | 333534 | 105R | (33)532 |
| 21R | 34 | 111R | (33)534 |
| 24R | 35 | 120R | (22)523222333 |
| 27H | (33)2(23)3 | 123R | (33)632 |
| 27R | 2223 | 141R | (33)732 |
| 33R | 3332 | 147R | (3332)432 |
| 33H 1 | (33)2353334 | 159R | (33)832 |
| 33H 2 | (33)3(23)3 | 168R | (23)1033 |
| 36H 1 | (33)232(33)234 | 174R | (33)66(33)54 |
| 36H 2 | (33)43234 | 189R | (34)843 |
| 39H | (33)232(33)3(32)2 | 222R | (33)634(33)434 |
| 39R | 3334 | 267R | (23)1722 |
| 45R | 232332 | 273R | (23)1733 |
| 51R 1 | (33)232 | 303R | (33)1632 |
| 51R 2 | (22)323 | 393R | (33)2132 |
The structure of ZnS is analogous to that of SiC. The bonding in ZnS is known to be partly ionic and partly covalent. The wurtzite and sphalerite modifications of this compound, which occur as minerals, correspond to the /AB/AB/AB/... and /ABC/ABC/,... packings respectively.
The cubic form is known to be the low-temperature modification and undergoes a
reversible phase transformation2 to the 2H form around
1020
C. In addition to these two common modifications, ZnS is
known19 to display a large variety of polytype structure with larger
identity periods. As stated earlier, all the polytype modifications of a
material have identical a and b lattice parameters and differ only
along c . The h/a ratio for the 2H modification of ZnS is
0.818 which is somewhat different from the ideal value 0.8165 for a perfect
close-packing.
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