8th International Workshop on Bulk Nitride Semiconductors 2013 (IWBNS-VIII)

The International Workshop on Bulk Nitride Semiconductor (IWBNS) is designed to implement and increase information exchange and collaboration among academic, industrial, and government scientists on challenges of growing high quality Group III nitride crystals with low concentration of structural defects and controlled conductivity type.Â

This workshop has been previously held in Brazil (2000, 2002, 2007), Poland (2004, 2009), and Japan (2006, 2011). For the first time, worldwide expert on bulk nitride related science and technology will meet in Germany

The IWBNS-VIII will focus on the most recent advances and potential approaches to solve remaining challenges on group-III nitride crystals growth and conductivity type control, surface preparation, fast growth and deposition rates, polarity control, device grade homoepitaxial films, doping, characterization, optical and electronic properties, device fabrication and characterization, modeling and theory.Â

The very generous support of the German Science Foundation (DFG) is gratefully acknowledged.Â

Dr. Elke Meissner, Fraunhofer IISB
Chair of IWBNS-VIII