18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVIII)

The 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVIII) will follow the traditions of the previous ICMOVPE, presenting the latest advances in science, technology and applications of MOVPE and related growth techniques. This is the pre-eminent Conference in the field, and the papers presented represent the leading-edge research done worldwide.

Topics

• Fundamental Studies and Modeling of Epitaxial Processes
• Wide-Bandgap Group-III Nitride Materials and Devices (AlN, GaN, InN, BN, etc.)
• III-V Semiconductors and Devices (Arsenides, Phosphides, Antimonides and Dilute Nitrides)
• Narrow Bandgap Materials and Devices (InAs, Antimonides, Bismides)
• II-VI Materials and Devices (CdTe, ZnO, ZnSe, ZnS, MCT, etc.)
• Semiconducting Oxides and Epitaxial Dielectrics (TCO, Ga2O3, SnO2, etc.)
• Epitaxy of 2D Materials and van der Waal Heterostructures
• Heteroepitaxy of Mismatched Alloys and III-Vs on Si
• Growth of Nanowires, Nanostructures and Low-dimensional Structures (Dots, Wires and Quantum Wells)
• Patterned Growth and Selective Area Epitaxy
• Atomic Layer Deposition and Epitaxy
• Pseudo-substrates and Epitaxial Lift-off Processes
• In Situ Monitoring, Process Control and Reactor Modeling
• In Situ Etching
• Nano-scale Characterization and Other Techniques
• Point Defects and Doping
• Growth for Energy Technology (Solid State Lighting, PV, Thermoelectrics, etc.)
• Equipment, Safety, Environmental and Production Issues