18th International Conference on Crystal Growth and Epitaxy ICCGE-18
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In Nagoya
â- Â General Session (Fundamentals & Growth Technologies)
G01Â Fundamentals of Nucleation and Crystal Growth
G02Â Surfaces and Interfaces
G03Â Nanomaterials and Low Dimensional Structures
G04Â Thin Films and Epitaxial Growth
G05Â Organic and Biological Crystallization
G06Â Bulk Crystal Growth
G07Â Crystalline Defects
G08Â Advanced Growth Technologies
G09Â In situ Observation and Characterization
G10Â External Fields, Microgravity
G11Â Industrial Crystallization
â- Â Topical Session (Materials & Applications)
T01Â III-V Semiconductors
T02Â Group IV Semiconductors
T03Â 2D Materials
T04Â II-VI and Oxide Materials
T05Â Materials for Spintronics
T06Â Materials for Optical Devices
T07Â Materials for Electron Devices
T08Â Materials for Organic Devices and Bio Applications
T09Â Nitride Semiconductors
T10Â Silicon Carbide
T11Â Late News Session
â- Â Joint Session - examples -
Growth Simulation and PracticeNanostructure - Fundamentals and Applications
Contact:
Yusuke MORI
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