
Meeting report
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Topography
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The benefits of the long beamline (80 m) of the Topography Station at SRS Daresbury with its small vertical divergence for topographic reticulography were demonstrated by A.R. Lang (Bristol). In this method a fine absorbing mesh is placed behind the crystal and projected by the diffracted beam on a photographic plate with varying distance to the mesh. The distortions of the mesh shadow allow determination of the orientation differences between crystal segments of the probe. A reticulograph of a giant screw dislocation in SiC allowed determination of the handedness of the screw.
M. Dudley (Stony Brook) reported on whitebeam synchroton topographic studies of hollow-core superscrew dislocations in 4H- and 6H-SiC single crystals. A novel topographic procedure to determine the point-to-point lattice parameter variations near the crystal surface was introduced by A.E. Voloshin (Moscow). The method is based on computer processing of plane-wave topographs obtained with conventional X-rays and allows d-value mapping on large specimen areas with spatial resolution of 3-10 m and high sensitivity to lattice distortions. The technique was applied to the study of KDP-type crystals grown from aqueous solution.
The last contribution (N. Goswami, New Delhi) dealt with the conventional X-ray topography and high-resolution diffractometry study of coiled GaAs membranes produced for force sensor applications.
H. Klapper